Thanks, but i think these designs are popular....the reason being is that you dont need an output inductor...just the leakage in the transformer is used to the same end.
You need some output inductance, but that little bit can come by way of eg seven torroids round the busbar as it leads to the output capacitor bank.
The attached is 565vin to 12v 300A out.....a very cheap way to do it, and very good as long as you use SiC FETs.
The only stipulation is that you must use SiC FETs.....because the high leakage inductance causes severe reverse recovery in the primary transistors otherwise.......this is shown in the attached, one is a "Normal" half bridge smps with low leakage, and the other is a half bridge which uses a raised level of leakage inductance......just look at the reverse recovery current spikes in the one with high leakage.
...if you dont use SiC FETs then you might get away with it with a very heavily damped gate drive, big heatsinks, and low switching frequency, but SiC FETs are cheaper now so go with SiC.
Do you agree?
(LTspice and PDF attached)