I've used P-Channel Fets as blocking diodes on MCU boards so they can write to EEPROM on power down. The intrinsic diode on the FET forward biased when the board is initially powered. Initially the gate is pulled high by a high-value resistor. Once the chip boots, it pulls the gate low to reduce the drop when powering the rest of the board. The MCU monitors the supply voltage. If it drops below 4.5V, the MCU releases the gate. If the supply doesn't return after a short time (a few ms), then the chip turns everything off and writes it EEPROM before the 100uF cap on board drops too far.
In this case, the P-FET is used as a diode which can be bypassed by the lower drop of a few mOhms of a fully enhanced FET.