IGBTs have higher current density than BJTs. They are absolutely optimized for switching. They're already near ratings in saturation at rated current. Drawing even a small fraction of that current, at a high voltage drop, results in extreme heating. Which causes spot heating, which enhances the hFE of the PNP structure, and reduces the Vgs(th) of the FET structure, making it doubly worse than spot heating of BJT or MOSFET structures alone.
MOSFETs exhibit 2nd breakdown as well, because they have been optimized to the point where power density is into that critical range.
As far as I know, so-called linear MOSFETs are simply constructed with lower cell density (and probably some source resistance or something), so the die area and Rds(on) is higher (and cost, too) given the ratings, but the power density is below the critical point so their SOA is useful.
Tim