Hi Richard,
so in or opinion we should replace the two 10 Ohm resistors with two 0 Ohm resistors and also replace the FET with a IRF620 for example, correct?
Paulo
First start with a low supplied voltage to the mosfet, and gradually increase. Record some peak drain voltages with a known load.
Replace 10 ohm with a short, leave the other open. One driver probably has the power, and they may not be designed to work in direct parallel.
Look at the drain voltage - see if it is higher. If it is, then the mosfet was definitely absorbing extra power during the transitions, and as I tried to explain, conduction in the linear mode is the most difficult power for the mosfet to handle safely.
If it is higher, you could use a higher voltage mosfet, but the better solution is to get the peak drain voltage under control if possible. I do not know the transformer ration, the voltages, and the circuit on the transformer output, so it is hard for me to suggest something. Based on the transformer ratios and peak expected flyback voltage of the transformer when the mosfet turns off, what would the calculated peak voltage be (excluding and leakage inductance - assume the transformer is ideal)?
If the mosfet is allowed to go into avalanche breakdown, it will mean that for a very short time perhaps half the peak drain current at 100V plus is flowing into the mosfet for probably a few nanoseconds, but 13 million times a second. If most of this current is going though a few cells in the mosfet, those are the cells that will fail first which will destroy the whole mosfet.
A simple drain snubber circuit is a capacitor and resistor in parallel connected to the mosfets + supply rail. The other end is connected to a switching diode (it will have to be very fast - perhaps a 100V schottky diode) from the mosfet drain (anode) to the capacitor-resistor (cathode). The voltage across the capacitor will rise to a point when the average current from the leakage inductance equals the average current through the resistor. The bigger the resistor, the higher the voltage but the less power is probably being wasted. The resistor is picked so that under worse case conditions, the drain voltage never exceeds the maximum.
There are more sohpisticated snubbers that are more efficient, but start simple. It could even be that a capacitor and series resistor without the diode is sufficient, especially is the leakage inductance of the transformer is very low. (Probably is at 13MHz).
If it does not look like you can keep the peak drain voltage is under 100V under all load conditions, you may have to go to a 200V mosfet.
The IRF620 has substantially more capacitance. Can you use a IRF610? (I do not know your drain current). The greater capacitance is not necessarily a bad thing - the greater capacitance may slow down ringing on the drain.