Author Topic: How do extract parasitic inductance in a power mosfet (PWM/SMPS design)  (Read 874 times)

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Offline Fusion916Topic starter

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Hi all,

I kind of got caught with my pants down not modeling the parasitic inductance on the PWM drive line (both layout/routing inductance and parasitic from power mosfet). I can figure out how to model the layout parasitic, but is there any way to extract and model the parasitic inductance inside a power mosfet package from the datasheet? Or is there anyway to make an educated guess given the device package or given parasitic capacitance?
 

Offline jbb

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Re: How do extract parasitic inductance in a power mosfet (PWM/SMPS design)
« Reply #1 on: January 20, 2018, 03:00:17 am »
There is a way to extract it, but I suspect it's pretty difficult.  First up, does your data sheet have anything to say about it?
Second, does the manufacturer offer a SPICE or SABRE model for it?

Typically the source leakage inductance is the most critical.
 

Offline T3sl4co1l

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Re: How do extract parasitic inductance in a power mosfet (PWM/SMPS design)
« Reply #2 on: January 20, 2018, 03:31:26 pm »
Are you okay with typical values for various package types?

For example, TO-220 inserted to full depth (i.e. up to the shoulders on the pins) is about 5nH per pin.

Tim
Seven Transistor Labs, LLC
Electronic design, from concept to prototype.
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