The VOH IOH type calculation is principally useful at "DC", i.e. when the transition has completed. Where purity of the transition is more important, the output resistance at other points is more important, and will be lower. The difference between the two will be minimised by using more gates, since each transistor will not have to be supplying the full current.
Hence the best output resistance, which will have to be determined empirically, may depend on whether you are interested in a "short range" or "long range" TDR.
Having fewer gates in a package shares the effects of package lead resistance/inductance across packages, and allows more capacitance to be placed near each gate. Those are good w.r.t. the edges, as is having a solid ground plane and power plane as close together as possible.