Author Topic: Optical versus Magnetic isolation for sensors  (Read 823 times)

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Offline julian1Topic starter

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Optical versus Magnetic isolation for sensors
« on: February 24, 2021, 07:53:33 pm »
For sensors (ie high bit-depth adc,dacs) running in isolated noise/power supply domains, are optical isolators preferred over magnetic isolators or vice versa?  I am interested in noise immunity, more than HV isolation.

For example, comparing datasheets for two similar options for spi,

opto isolation (ACSL-6410-06TE)
  https://au.mouser.com/datasheet/2/678/AV02-0235EN_DS_ACSL-6xx0_2018-08-21-1827365.pdf
  Input-Output Capacitance                    0.7pF. at 1MHz.
  Low Level Supply Current                     4.6mA typ 7.5mA max.
  Input Threshold Current                       2.7mA typ. 7mA max.

magnetic isolation  (ADUM4151)
  https://au.mouser.com/datasheet/2/609/ADuM4151_4152_4153-1503566.pdf
  Capacitance (Input to Output)1  CI- O    1.0pF,      f = 1 MHz
  Quiescent Side 1 CurrentIDD1 (Q)          2.9 mA
  Quiescent Side 2 Current  IDD2Q)           6.1 mA
  Input Current per Channel                       0.01uA typ +1μA max.

The key characteristic of coupling capacitance, appears similar for both (0.7pF vs 1pF at 1MHz).

One thing, that stands out is the higher drive/pulse power for the optocoupler.  eg. (pulsed 7mA), which is perhaps more likely to introduce noise in the sensor domain. Although maybe it's not an issue just driving an open-collector pull-up resistor placed right next to the chip.

 


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