Hello
An interesting article on noise in resistors
Regards
OS
Characterization of low-frequency noise sources
in planar devices using cross-shaped 4-terminal
Vincent Mosser and Alexandre Kerlain
Itron France, 50 avenue Jean Jaures, F-92120 Montrouge
vincent.mosser@itron.com, +33 146 00 66 74
Abstract. We promote here the use of cross-shaped 4-terminal devices (Hall crosses) to measure
LF noise spectra in planar technologies. The implementation of this method is described. When
investigating LF noise for the purpose of material or process characterization, such a procedure
is more simple and straightforward compared to conventional differential noise measurements
based on a Wheatstone bridge or single-ended measurements based on proprietary electronic
circuitry. As an example of application, we then use it to extract information on the energetic as
well as spatial location of a trap in Metal-Insulator-Semiconductor PHEMT pseudomorphic
heterostructures.
Keywords: GaAs, LF-noise, P-HEMT, LF-Noise measurement set-up.