I've posted measurements for one JFET (BF861) earlier in this thread, taken in a somewhat different setup (K263 as a source and K617 as a meter). JFETs are much better than common signal diodes like 1N4148, however very few would come close to the performance of even the worst BAV199 devices and none will survive 100V reverse voltage or have leakages similar to the best of BAV199. I plan to measure some more JFETs and BJTs soon (the Keithley 617 has some selected BJTs as input protection diodes by the way) and will post results here.
Cheers
Alex
BAV199 diodes are only tested and guarantied to be below 5 nanoamps. A 4117 JFET is guarantied to be 10 picoamps or lower.
Of course if you need a higher peak inverse voltage than a JFET gate will support, then you have to use the BAV199 or maybe the collector-base junction of a transistor but in both cases in order to have guarantied low leakage, you have to grade them yourself.
What the BAV199, JFET gate junctions, most transistor junctions, and real low leakage diodes have in common is no gold doping which would significantly increase reverse leakage current. For the BAV199, this is revealed by its relatively high reverse recovery time of up to 3us.