While trying to find some N- or P-Channel Enhancement MOSFETs with the following specs Udsmax >=20V, RDSon <=20R and Ids-leakage (with gate-source shorted) <=1pA at Uds=10V i tested a few already and just wanted to list them here with measured leakage values.
I didnt find any similar examples for mosfet leakage (Art of Electronics X-Chapters has a JFET/Bipolar leakage chart on page 102 though), so those may be of interest to people who want to know which round about real values can be expected compared to the very conservative/automatic test equipment limited values in the mosfet-datasheets.
Leakage measurements were generally done with Uds = 10V, as thats the maximum voltage in the circuit that the mosfets would be used at in my circuit.
Sometimes i tested also at lower voltages to see how the leakage behaves.
Maybe you guys also have mosfet-measurements, especially of those with <=1pA?
IRLR2908: N-Channel 80V 30A 28mR D-Pak
0.5V: 10.7pA
1V: 28.9pA
2V: 71.8V
10V: 69pA
SUD50P10: P-Channel -100V -35A 0.04R TO252
-10V: -196pA
SI4410DY: N-Channel 30V 8A 14mR SO8
1V: 395pA
SI4467DY: P-Channel -12V -12A 11mR SO8
-10V: -1040pA
SI9407: P-Channel -60V -3.5A 0.15R SO8
-10V: -244pA
SI2327DY: P-Channel -200V -0.5A 2.4R SOT23
-10V: -68.6pA
SI2337DS: P-Channel -80V -2.2A 0.2R SOT23
-10V: -31.6pA
2N7002L: N-Channel 60V 115mA 7.5R SOT23
5V: 14.65pA
10V: 16pA
2N7002L: second specimen:
10V: 22.1pA
2N7002L: third specimen:
10V: 22.8pA
NTS4409: N-Channel with Gate-ESD-protection 25V 0.75A 250mR SC70
1V: 2.9pA
10V: 3.2pA
PMV130ENEA: N-Channel with Gate-ESD-protection 40V 2.1A 120mR SOT23
10V: 40.6pA
BSS131: N-Channel 240V 0.1A 14R SOT23
10V: 0.6pA
20V: 0.73pA
All measurements done with my trusty K617.