The Bry-MOS Design Engineer will develop new Berynium doped Field Effect Transistor (BryMOS) based circuits for customers all over the galaxy. Our BryMOS electronics are next generation components designed to meet the needs of 24th Century engineers.
BryMOS applications include quasi-phonon gate arrays, Quantum Analog Processing Blocks (QAPrBs), discrete neutron spin control modules and digilog sub quantized, partially diffracted edge scribed x-ray frequency circuits. The Bry-MOS circuit designer will work with a team of engineers developing new berynium based components, meeting new customer requirements and evolving the current advanced highly automated robotics product line. This individual will work closely with product management, manufacturing and other engineering teams to ensure delivery of quality components to customers. Take this opportunity to join a great team. The location for this position is in NEB R&D Park, New Indianapolis, Sirius 6B, Sirius System.
See more about this position and apply here by holoform:
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