Here is the method from the Karl-Heinz manual:
" 3.8 Measurement of E-MOS transistors and IGBTs
You should know for enhancement MOS transistors (P-E-MOS or N-E-MOS), that the measurement
of the gate threshold voltage (Vth) is more difficult with little gate capacity values. You can get a
better voltage value, if you connect a capacitor with a value of some nF parallel to the gate /source.
The gate threshold voltage will be find out with a drain current of about 3.5mA for a P-E-MOS and
about 4mA for a N-E-MOS. The RDS or better R DSon of E-MOS transistors is measured with a gate
- source voltage of nearly 5V , which is probably not the lowest value. In addition, the RDS resistance
is determined at a low drain current, which limits the resolution of the resistance value. Often in
the case of IGBTs and sometimes also withn enhancement MOS transistors, the available 5V of the
tester is not sufficient to drive the transistor across the gate. In this case, a battery with about 3V
will help to make a detection and measurements with the tester possible. The battery is connected
to the gate of the transistor with one pole and the other pole of the battery is then connected to a
test port (TP) of the tester instead of the transistor gate. When the battery is correctly polarized,
the battery voltage is added to the control voltage of the tester and the detection of the transistor
succeeds. The battery voltage must then be added to the indicated gate threshold voltage of course,
in order to get the correct threshold voltage for this component."
I tested it successfully on the Proteus simulator. Works great on the 2N4391 transistor
![Cheesy :D](https://www.eevblog.com/forum/Smileys/default/xcheesy.gif.pagespeed.ic.KPzuH4J-TG.png)
In the 1st screenshot, the 2N4391 is connected directly to the test contacts