This is kinda offtopic, but no, really not. It doesn't matter how you show it, it's just a philosophical question:
For a FET in the pentode region, is its Vds/Ids characteristic really anything other than just the drain impedance? If it takes different
gate voltages to get the desired
drain current on two parts, and then their drain impedance is about the same (high enough it's hardly even seen on those plots) is that really a difference in the Vds/Ids characteristic or just Vgs mismatch? That's all I have ever said, and as you see, I really don't have that much to say
![Smiley :)](https://www.eevblog.com/forum/Smileys/default/xsmiley.gif.pagespeed.ic.R8GFI-pF6f.png)
Also, I realize that drain impedance is probably not what you care about as long as it's "high enough", which probably isn't even that very high, as your schematic shows a 700Ω drain load.
If anything, it looks like the mismatched parts have different transconductance too, which might be relevant besides the different Id at given Vgs.