something like this is very useful, although at 150nm it's large compared to today's features at 22nm and upcoming 16nm.
The article quotes an engineer stating that it's not compatible with today's voltages, and that's true, but I don't see that as a problem. In the past we had 5V, 3.3V, 1.8V, and now 1.2V tech, and even 0.8V; the only reasons we keep lowering the voltages is to allow the gates to switch faster and to reduce the heat generated due to resistive losses in the silicon. At 10V and crossing a 160nm gap, this technology doesn't have much resistance in air, and so I think very little heat would be generated due to resistive losses. And if they can improve the technology to reduce the gap size, then the voltages needed to cross that gap can be reduced, and resistance would be reduced even further still.
If this tech goes mainstream, we would just move back to a higher voltage supply, but the advantage would be way faster computing at .46THz (460Ghz). That's 2 orders of magnitude faster than we can currently achieve with silicon.