I'm inclined to agree with the engineer who is actually building stuff for space...
I did for some years radiation testing on non-volatile memories. Beside there is a huge amount work in the literature on radiation effects on devices (see for instance IEEE Transaction on Nuclear Science).
Also, as you scale down, I concede it is quite possible that gates, etc. may require a smaller dose to be affected .... but the critical zones will be a much smaller target for the radiation to strike.
Actually, I didn't say: "IN GENERAL, the smaller the size, the larger the TID effects". On the contrary, I showed two opposite examples for which you can't say that there is no TID effects depedence on the technology node.
In particular:
1) Some degradation mechanisms (in this case, I was referring to radiation induced trapped charge in the oxide, which causes a threshold voltage variation) do actually depend on the gate oxide thickness (which, in turn, depends on the technology node). In particular, for ultra-thin gate oxides, the (semi-permanent) threshold voltage variation is a negligible mechanism, as there is no enough energy barrier width to prevent a quick charge neutralization by quantum tunneling. Therfore. in this example, the smaller the technology node, the smaller the permanent threshold voltage variations effects.
2) However, for non-volatile memories, things might go in the opposite direction. For instance radiation induced leakage currents permanently degrade the retention capability. It is true that, if you have a thinner oxide, radiation has a smaller probability of creating a defect inside it (merely because you have a smaller volume in which radiation can interact). However, once a defect is created, the leakage current due to trap-assisted tunneling exponentially (and not only linearly) depends on the oxide thickness and, of course, on the trap position. Keep also in mind that the number of stored electrons scales with the technology node (for technology node around 90nm you have about 1000 electrons/bit. Therefore with smaller technology nodes you have less charge and higher chance of critically high leakage currents). The radiation-induced prompt charge loss also depends on many factors, which are technology node-dependent.