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Would that only test 12 or 30V? If I could find a kit I would buy it and just assemble it myself.
Actually, it would depend on the MOSFET. The IRFP250 datasheet says it is rated to 200V or 30A max. so any voltage or current below these limits. However, practical circuits should give a good buffer and stay below 175V.
But what really limits the circuit is the heat transfer capability of the package. The TO-247 package is better at transferring heat from the die to the environment then say, a TO-220. That's why I suggested to keep each MOSFET at 100W max. So you can do 175V@571mA or 30V@3.3A or 10V@10A. In the circuit shown, I chose to limit the current to 3A. If you increase this design limit then that changes the wattage of the 0.25R shunt; eg. 25V@4A keeps the MOSFET to the 100W limit but now the shunt must be 4.7W+margin (probably should double that). You can try this yourself in the simulation by lowering the 150K resistor to 100K and the voltage source from +30V to +25V.
As I suggested, if you parallel 4 of these circuits then you multiply the 3A individual circuit limit by 4 or 12A. And if you stay at 30V or below, you won't overshoot the 100W limit per MOSFET or a combined 400W. If you plan on inputting more than 30V then you'll have to turn-down the pot. Say, about half-way (1.6A per circuit) for up to 60V, etc.
This circuit can be assembled on a small perfboard; 1 IC+passives with short leads to 4 mounted MOSFETs, shunts, and a pot. I think it's a good beginner project.