It is helpful to consider a BJT as voltage controlled when non-linear effects matter,
and current controlled when the conditions warrant. (And charge controlled when
that's useful.)
Folks who do this for a living find all three models helpful at times. Orthodoxy and
iconoclastic adherence may provide some comfort, but the inflexibility makes for
inefficient design.
Current controlled device vs voltage controlled? What is the difference? I saw in MrCarlson's lab that he said a transistor was a current controlled device and a FET? was a voltage controlled device?
For my opinion, this is a clear question - and there can be only one correct answer.
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The answer to raspberrypi`s question is: FET`s as well as BJT`s both are voltage-controlled!
I am aware that in some textbooks and many (too many!) forum contributions the BJT is described as current-controlled.
But this is simply WRONG!
What about the relation Ic=B*IB?
This is just a correlation (and not a chain of causation) - which should better be read as IB=IC/B.
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There is only one fundamental control function - W. Shockley`s equation which describes the voltage-current relationships at a pn junction:
Ic=Is*exp[(VBE/VT)-1] .
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Two simple examples:
1) The gain expression of a common emitter stage contains the transconductance gm=IC/VT. This parameter gm is nothing else than the SLOPE of the mentioned exponential function (Shockleys equation): gm=d(IC)/d(VBE). How can somebody deny that VBE controls IC?
2.) Question: Can somebody (who still is believing that IB would control IC) explain the function of a stabilizing resistor RE in the emitter path?
OK... In answer to the last question:
Consider a voltage source driving a resistor of Rb like this
GND -- Vs ---- Rb ---- B --- E --- Re --- GND
Now using the h-parameter model (that fixes the voltage between B and E
at a "nominal" diode drop), the voltage around the loop would be
Vs - (Rb*Ib + 0.7 + Re*Ic) = 0
If we take as our model a current controlled source Ic = hfe * Ib, then
Vs - 0.7 = Ib * (Rb + hfe * Re)
But for suitably large beta, any incremental change in Vs (call it "vs) causes an
additional current in Re: ie = vs/Re which is more-or-less equal to the
incremental collector current. If the collector load is Rc, then the
incremental change in collector voltage will be Rc*vs/Re -- giving us
a gain of Rc/Re.
And I did it all with a current controlled model. One could do the same
with a voltage controlled model, but you'd end up with a really unusable
analytic model.
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So that's question 2.
Now to the other part that looked interesting:
All reliable knowledge sources (Universities of Berkeley and Stanford, MIT, ....) describe the BJT as voltage-controlled.
This applies also to high-quality books like "Art of Electronics" (Horowitz/Hill).
To me, this is the only logical description because a small current NEVER can directly control a larger current (even the well-known "water-flow" model cannot function this way from the energy point of view).
The working principle of many circuits (current mirror, differential amplifier...) and many observable effects (EARLY-effect, tempco of -2mV/K,...) can be explained only based on voltage-control.
Therefore, it is really a phenomenon to me that current-control is still under discussion. This view cannot be supported by any explanation - neither physical nor practical.
1. All the reliable engineers I've ever worked with have used both models.
All the textbooks I've ever read employ several models.
2. The "the water flow model"? I'd agree, nor does the "little elves" model, or the
"magic smoke" model. I don't know anyone who uses either to describe the action of
a BJT.
However, please note that, as powerful as the voltage control model is, it does not
explain the behavior of an optically excited BJT. Nor does it explain the triggering
of a parasitic BJT in CMOS circuits by injection of charges from nearby sources.
(I have seen both happen in real products.) These are both charge controlled
phenomena.
Finally, the assertion that "a small current NEVER can directly control a larger current"
is offered as a support for the argument that "a small current does not control a larger current
in a BJT" which is a tautology -- a rhetorical trap for listeners.
In fact, a small current can cause the concentration of minority carriers in the base region
to become large enough to make it possible for current to flow in between the collector
and base, despite the presence of a reverse bias condition. The number of carriers need
only be sufficient to reduce the barrier to further injection of carriers across the C-B barrier.
Once this is achieved, it is only necessary to maintain sufficient base current to support the
minority carrier concentration because of the few injected carriers that are swept into the
BE junction.
As long as we're appealing to the citadel of Berkely, see an EE105 lecture
https://inst.eecs.berkeley.edu/~ee105/sp04/handouts/lectures/Lecture22.pdfIt rationally presents several models, each of which have some use in real
engineering and circuit design.
I don't particularly care what orthodoxy folks embrace, but I will point out that
adherence to one so rigid is neither efficient nor helpful for folks who want to
develop an understanding of how to design and explain the behavior of circuits.
respectfully,